SiC power MOSFETs | SiC discrete portfolio 750 V
HVCPAK (Top side cooled)
Benefits
SMD with improved cooling possibility
Bosch dual channel trench gate technology for lower RDS(on) × A
Switching speed adjustable with gate resistors
Target applications
On-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles
Technical features HVCPAK (Top side cooled) – 2nd generation
| BT2M0750013E7A | BT2M0750028E7A | |
|---|---|---|
|
VDS
|
BT2M0750013E7A
750 V
|
BT2M0750028E7A
750 V
|
|
ID max
|
BT2M0750013E7A
95 A
|
BT2M0750028E7A
27,5 A
|
|
RDS(on) @ 50 % IDS max
|
BT2M0750013E7A
13 mΩ
|
BT2M0750028E7A
28 mΩ
|
|
Status
|
BT2M0750013E7A
In development
|
BT2M0750028E7A
In development
|
|
Type
|
Silicon carbide trench MOS
|
|
Drive voltage
|
-5 V ... 15 V or 18 V
|
|
Features
|
|
|
Miller ratio (QGD/QGS)
|
<1
|
|
Tj min [°C]
|
-55 °C
|
|
Tj max [°C]
|
175 °C
|
Silicon carbide (SiC) power semiconductors from Bosch – SiC discretes
Bosch offers a comprehensive portfolio of silicon carbide (SiC) power semiconductors tailored meet the demanding needs of high-power applications. Our range includes bare dies, discretes, and power modules, guaranteeing the ideal solution for any application.
For packaged solutions, our SiC discretes are ideal for applications including on-board chargers, DC/DC converters, and inverters. These packaged versions ensure reliable performance and ease of integration into various power electronics system
