SiC power MOSFETs | SiC discrete portfolio 750V
Package TO263-7L
Benefits
Available in SMD and THT packages
Bosch dual channel trench gate technology for lower RDS(on) × A
Bosch dual channel trench gate technology for lower RDS(on) × A
Target applications
On-board chargers, DC/DC converters & inverters in (hybrid) electric vehicles
Technical features Package TO263-7L – 2nd generation
| BT2M0750013D7A | BT2M0750028D7A | |
|---|---|---|
|
VDS
|
BT2M0750013D7A
750 V
|
BT2M0750028D7A
750 V
|
|
ID max
|
BT2M0750013D7A
96 A
|
BT2M0750028D7A
48 A
|
|
RDS(on) @ 50% IDS max
|
BT2M0750013D7A
13 mΩ
|
BT2M0750028D7A
28 mΩ
|
|
Status
|
BT2M0750013D7A
In development
|
BT2M0750028D7A
In development
|
|
Type
|
Silicon carbide trench MOS
|
|
Drive voltage
|
-5 V ... 15 V or 18 V
|
|
Features
|
|
|
Miller ratio (QGD/QGS)
|
<1
|
|
Tj min [°C]
|
-55 °C
|
|
Tj max [°C]
|
175 °C
|
