SiC power MOSFETs | SiC discrete portfolio 1,200V
Package TO263-7L
Benefits
Available in SMD and THT packages
Bosch dual channel trench gate technology for lower RDS(on) × A
Switching speed adjustable with gate resistors
Target applications
On-board chargers, DC/DC converters & inverters in (hybrid) electric vehicles
Technical features Package TO263-7L – 2nd generation
| BT2M1200022DA | BT2M1200034D7A | BT2M1200040D7A | BT2M1200060D7A | |
|---|---|---|---|---|
|
VDS
|
BT2M1200022DA
1,200 V
|
BT2M1200034D7A
1,200 V
|
BT2M1200040D7A
1,200 V
|
BT2M1200060D7A
1,200 V
|
|
ID max
|
BT2M1200022DA
59 A
|
BT2M1200034D7A
41 A
|
BT2M1200040D7A
33 A
|
BT2M1200060D7A
22 A
|
|
RDS(on) @ 50% IDS max
|
BT2M1200022DA
22 mΩ
|
BT2M1200034D7A
34 mΩ
|
BT2M1200040D7A
40 mΩ
|
BT2M1200060D7A
60 mΩ
|
|
Status
|
BT2M1200022DA
In development
|
BT2M1200034D7A
In development
|
BT2M1200040D7A
In development
|
BT2M1200060D7A
In development
|
Technical features Package TO263-7L – 1nd generation
| BT1M1200031D7A | BT1M1200050D7A | BT1M1200023D7A | |
|---|---|---|---|
|
VDS
|
BT1M1200031D7A
1,200 V
|
BT1M1200050D7A
1,200 V
|
BT1M1200023D7A
1,200 V
|
|
ID max
|
BT1M1200031D7A
44 A
|
BT1M1200050D7A
29 A
|
BT1M1200023D7A
63 A
|
|
RDS(on) @ 50% IDS max
|
BT1M1200031D7A
31 mΩ
|
BT1M1200050D7A
50 mΩ
|
BT1M1200023D7A
23 mΩ
|
|
Status
|
BT1M1200031D7A
Active
|
BT1M1200050D7A
Active
|
BT1M1200023D7A
In development
|
|
Type
|
Silicon carbide trench MOS
|
|
Drive voltage
|
-5 V ... 15 V or 18 V
|
|
Features
|
|
|
Miller ratio (QGD/QGS)
|
<1
|
|
Tj min [°C]
|
-55 °C
|
|
Tj max [°C]
|
175 °C
|
Silicon carbide (SiC) power semiconductors from Bosch – SiC discretes
Bosch offers a comprehensive portfolio of silicon carbide (SiC) power semiconductors tailored meet the demanding needs of high-power applications. Our range includes bare dies, discretes, and power modules, guaranteeing the ideal solution for any application.
For packaged solutions, our SiC discretes are ideal for applications including on-board chargers, DC/DC converters, and inverters. These packaged versions ensure reliable performance and ease of integration into various power electronics system
