Silicon carbide (SiC) bare die portfolio 750 V from Bosch

Efficient and robust power switches for on-board chargers, DC/DC converters and inverters

Our silicon carbide (SiC) power MOSFETs handle voltages up to 750 V.

The bare die versions are designed for high power applications like inverter modules with system voltages around 400 V.

The robust SiC power MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For applications such as applications like inverters in (hybrid) electric vehicles, on-board chargers and DC/DC converters, also packaged versions are available.

Benefits

Bosch dual channel trench gate technology for lower RDS(on) × A

Integrated gate resistance for easier paralleling

Front side metallization option for sintering and soldering

Target applications

Inverters in (hybrid) electric vehicles, on-board chargers and DC/DC converters

Technical features – 2nd generation

	BT2M0750005BOA	BT2M0750006BOA	BT2M0750013BBA
VDS	BT2M0750005BOA 750 V	BT2M0750006BOA 750 V	BT2M0750013BBA 750 V
ID max	BT2M0750005BOA 230 A	BT2M0750006BOA 200 A	BT2M0750013BBA 96 A
RDS(on) @ 50% IDS max.	BT2M0750005BOA 5 mΩ	BT2M0750006BOA 6 mΩ	BT2M0750013BBA 13 mΩ
Size²	BT2M0750005BOA 31 mm	BT2M0750006BOA 27 mm	BT2M0750013BBA 14 mm
Status	BT2M0750005BOA Active	BT2M0750006BOA Active	BT2M0750013BBA Active


Type	Silicon carbide trench MOS
Drive voltage	-5 V ... 15 V or 18 V
Miller ratio (QGD/QGS)	<1
Features	Wafer thickness: 180 µm High oxide reliability
Front side metallization	BOA type: AlCu/Ni/Pd/Au (flash)
Tj min [°C]	-40 °C
Tj max [°C]	175 °C (200 °C for t < 100 h)

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Article

How Silicon Carbide Semiconductors Are Conquering E-mobility: Semiconductor Digest 10/2024

Silicon carbide (SiC) power semiconductors from Bosch – SiC bare dies

Bosch provides a comprehensive silicon carbide (SiC) power semiconductor portfolio designed to meet the demanding needs of high-power applications. Our offerings include bare dies, discretes, and power modules, ensuring that we have the right solution for every application.

Our SiC bare dies are specifically engineered for use in high power applications such as inverter modules. These bare die versions provide the flexibility and performance required for advanced power management systems.