Silicon carbide (SiC) discrete portfolio 750V from Bosch

Efficient and robust power switches for on-board chargers, DC/DC converters and inverters

Our silicon carbide (SiC) power MOSFETs handle voltages up to 750 V. The packaged versions are designed for power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 400 V.

The robust SiC power MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For bare-die applications such as inverter modules, also non-packaged chip versions are available.

Benefits

Available in SMD and THT packages

Bosch dual channel trench gate technology for lower RDS(on) × A

Switching speed adjustable with gate resistors

Target applications

On-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles

Technical features TO247-4L - 2nd generation

	BT2M0750013T4A	BT2M0750028T4A
VDS	BT2M0750013T4A 750 V	BT2M0750028T4A 750 V
ID max	BT2M0750013T4A 96 A	BT2M0750028T4A 48 A
RDS(on) @ 50 % IDS max	BT2M0750013T4A 13 mΩ	BT2M0750028T4A 28 mΩ
Status	BT2M0750013T4A In development	BT2M0750028T4A In development


Type	Silicon carbide trench MOS
Drive voltage	-5 V ... 15 V or 18 V
Features	Kelvin source pin for reduced switching losses High oxide reliability
Miller ratio (QGD/QGS)	<1
Tj min [°C]	-55 °C
Tj max [°C]	175 °C