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SiC power MOSFETs |​ SiC discrete portfolio 1,200V

Package TO247-4L

BT1M120

Efficient and robust power switches for on-board chargers, DC/DC converters and inverters

Our silicon carbide (SiC) power MOSFETs handle voltages up to 1,200 V. The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.

The robust SiC power MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.

For bare-die applications such as inverter modules, also non-packaged chip versions are available.

Benefits

Available in SMD and THT packages

Bosch dual channel trench gate technology for lower RDS(on) × A

Switching speed adjustable with gate resistors

Target applications

On-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles

Technical features Package TO247-4L – 2nd generation

BT2M1200022T4A BT2M1200034T4A BT2M1200040T4A BT2M1200060T4A
VDS
BT2M1200022T4A
1,200 V
BT2M1200034T4A
1,200 V
BT2M1200040T4A
1,200 V
BT2M1200060T4A
1,200 V
ID max
BT2M1200022T4A
59 A
BT2M1200034T4A
41 A
BT2M1200040T4A
33 A
BT2M1200060T4A
22 A
RDS(on) @ 50% IDS max
BT2M1200022T4A
22 mΩ
BT2M1200034T4A
34 mΩ
BT2M1200040T4A
40 mΩ
BT2M1200060T4A
60 mΩ
Status
BT2M1200022T4A
In development
BT2M1200034T4A
In development
BT2M1200040T4A
In development
BT2M1200060T4A
In development

Technical features Package TO247-4L 1st generation

BT1M1200023T4A BT1M1200031T4A BT1M1200050T4A
VDS
BT1M1200023T4A
1,200 V
BT1M1200031T4A
1,200 V
BT1M1200050T4A
1,200 V
ID max
BT1M1200023T4A
63 A
BT1M1200031T4A
44 A
BT1M1200050T4A
29 A
RDS(on) @ 50% IDS max
BT1M1200023T4A
23 mΩ
BT1M1200031T4A
31 mΩ
BT1M1200050T4A
50 mΩ
Status
BT1M1200023T4A
In development
BT1M1200031T4A
In development
BT1M1200050T4A
In development
Type
Silicon carbide trench MOS
Drive voltage
-5 V ... 15 V or 18 V
Features
  • Kelvin source pin for optimized switching performance
  • High oxide reliability
Miller ratio (QGD/QGS)
<1
Tj min [°C]
-55 °C
Tj max [°C]
175 °C
  • ㅤ

Silicon carbide (SiC) power semiconductors from Bosch – SiC discretes

Bosch offers a comprehensive portfolio of silicon carbide (SiC) power semiconductors tailored meet the demanding needs of high-power applications. Our range includes bare dies, discretes, and power modules, guaranteeing the ideal solution for any application.

For packaged solutions, our SiC discretes are ideal for applications including on-board chargers, DC/DC converters, and inverters. These packaged versions ensure reliable performance and ease of integration into various power electronics system